v 2.00 gaas spdt switch dc - 3 ghz m a s w 2 0 0 0 guaranteed specifications** (-55 c to +85 c) frequency rang e dc - 3.0 ghz insertion loss dc?.5 ghz 0.5 db max dc?.0 ghz 0.6 db max dc?.0 ghz 0.8 db max dc?.0 ghz 1.0 db max vswr relectiv e dc?.5 ghz 1.20:1 max dc?.0 ghz 1.20:1 max dc?.0 ghz 1.20:1 max dc?.0 ghz 1.40:1 max absorptiv e dc?.0 ghz 1.20:1 max dc?.0 ghz 1.40:1 max isolation dc?.5 ghz 43 db min dc?.0 ghz 35 db min dc?.0 ghz 27 db min dc?.0 ghz 24 db min operating characteristics impedance 50 w nominal switching characteristics t rise, t f all (10/90% or 90/10% rf) 22 ns t yp t on, t off (50% ctl to 90/10% rf) 27 ns t yp tr ansients (in-band) 25 mv t yp input p o wer for 1db compression control v oltages (vdc) 0/-5 0/-8 0.05 ghz +24 dbm +26 dbm t yp 0.5?.0 ghz +26 dbm +32 dbm t yp intermodulation intercept point (for two-tone input power up to +5 dbm) intercept points ip 2 ip 3 0.05 ghz +63 +43 dbm t yp 0.5?.0 ghz +80 +53 dbm t yp control v olta g e (complementary logic) v in lo w 0 to -0.2 v @ 5 ua max v in hi -5 v @ 60 ua t yp to -8 v @500 ua max die siz e 0.056" x 0.056" x 0.010" 1.40mm x 1.40mm x 0.25mm) f e a t u r e s low insertion loss, 0.5 db typical @ 2 ghz fast switching speed, 22 ns typical reflective/absorptive configuration ultra low dc power consumption
bondpad dimensions inches (mm) rf:0.004 x 0.004 (0.100 x 0.100) rf1, rf2:0.009 x 0.009 (0.225 x 0.225) a1, a2, b1, b2:0.004 x 0.004 (0.100 x 0.100) gnd1, gnd2:0.009 x 0.004 (0.225 x 0.105) rl1, rl2:0.004 x 0.005 (0.100 x 0.125) handling precautions p ermanent damage to the MASW2000 may occur if the following precautions are not adhered to: a. cleanliness ?the MASW2000 should be handled in a clean environment. do not attempt to clean unit after the MASW2000 is installed. b. static sensitivity ?all chip handling equipment and personnel should be dc grounded. c. tr ansient av oid instrument and po w er supply transients while bias is applied to the MASW2000. use shielded signal and bias cables to minimize inductive pick-up . d. bias ?pply voltage to either control port a1/b2 or a2/b1 only when the other is grounded. neither port should be allo w ed to ?loat? e. general handling it is recommended that the MASW2000 chip be handled along the long side of the die with a shar p pair of bent tweezers . do not touch the surface of the chip with fingers or tweezers . mounting the MASW2000 is back-metallized with pd/ni/au (100/1,000/ 10,000?) metallization. it can be die-mounted with ausn eutectic preforms or with thermally conductive epoxy . the package sur - f ace should be clean and flat before attachment. eutectic die attach: a. a 80/20 gold/tin preform is recommended with a work surface temperature of approximately 255? and a tool temperature of 265? . when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be approximately 290? . b. do not expose the MASW2000 to a temperature greater than 320? for more than 20 seconds . no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: a. apply a minimum amount of epoxy and place the MASW2000 into position. a thin epoxy fillet should be visible around the perimeter of the chip . b. cure epoxy per manufacturer? recommended schedule . c. electrically conductive epoxy may be used but is not required. wire bonding a. ball or wedge bond with 1.0 mil diameter pure gold wire . thermosonic wirebonding with a nominal stage temperature of 150? and a ball bonding force of 40 to 50 g r ams or wedge bonding force of 18 to 22 g r ams is recommended. ultrasonic energy and time should be adjusted to the minimum le v els to achie v e reliable wirebonds . b. wirebonds should be started on the chip and terminated on the package . gnd bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. handling, mounting, bonding procedure MASW2000 truth t a bl e * * * control inputs condition of switc h a1/b2 a2/b1 rf1 rf2 v in hi v in lo w on off v in lo w v in hi off on *** for normal spdt operation a1 is connected to b2 and a2 is connected to b1. maximum ratings a.control v oltage (a1/b2 or a2/b1):-8.5 vdc b. max input rf p ow er : +34 dbm c. storage t emperature:-65? to +175? d. maximum operating t emperature:+175? die siz e inches (mm) 0.056 x 0.056 x 0.010 (1.40 x 1.40 x 0.25) v 2.00
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